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[5] V.V. Afanas'ev; F. Ciobanu; G. Pensl; and A. Stesmans; Low-frequency noise in vertical InAs nanowire FETs. KM Persson, E Lind, AW Dey, C Thelander, H Sjöland, LE Wernersson.

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出版年份：1980 年文章数：459 投稿命中率：25.0%. 出版周期：monthly 自引率：12.0% 审稿周期：平均1月 Electron Device Letters, IEEE IEEE Electron Device Letters was one of the most-cited journals, ranking number ten in electrical and electronics engineering in 2003, according to the annual Journal Citation Report (2003 edition) published by the Institute for Scientific Information.

European Studies Journal abbreviation: IEEE electron device letters The abbreviation of the journal title " IEEE electron device letters " is " IEEE Electron Device Lett. IEEE Electron Device Letters comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.